VS-ETL015Y120H Datasheet, PDF (7/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A

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30
25
T_J = 25 °C
20
T_J = 150 °C
15
10
T_J = 125 °C
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_FM (V)
Fig. 13 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode
Forward Characteristics
160
140
120
100
80
60
40
20
0
0
5
10 15 20 25 30
I_F - Continuous Forward Current (A)
Fig. 14 - Maximum Da1 - Da2 - Db1 - Db2 Clamping Diode
Forward Current vs. Case Temperature
10
150 °C
1
0.1
125 °C
0.01
0.001
Linear 25 °C
0.0001
25 °C
0.00001
100 200 300 400 500 600 700 800 900 1000 1100 1200
V_R (V)
Fig. 15 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode
Reverse Leakage Current
VS-ETL015Y120H
Vishay Semiconductors
250
230
210
190
125 °C
170
150
130
25 °C
110
90
100
200
300
400
500
dI_Fdt (A/μs)
Fig. 16 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode
Reverse Recovery Time vs. dI_F/dt,
V_rr = 400 V, I_F = 10 A
20
18
16
125 °C
14
12
10
25 °C
8
6
4
2
100
200
300
400
500
dI_F/dt (A/μs)
Fig. 17 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode
Reverse Recovery Current vs. dI_F/dt,
V_rr = 400 V, I_F = 10 A
1200
1100
1000
125 °C
900
800
700
600
25 °C
500
400
300
100
200
300
400
500
dI_Fdt (A/μs)
Fig. 18 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode
Reverse Recovery Charge vs. dI_F/dt,
V_rr = 400 V, I_F = 10 A
Revision: 16-Jun-16
7
Document Number: 94858
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