VS-ETL015Y120H Datasheet, PDF (2/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A

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VS-ETL015Y120H
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
V_CES
V_GES
I_CM
I_LM ⁽¹⁾
I_C
Power dissipation
P_D
Da1 - Da2 - Db1 - Db2 CLAMPING DIODE
T_C = 25 °C
T_C = 80 °C
T_SINK = 80 °C
T_C = 25 °C
T_C = 80 °C
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
V_RRM
I_FSM
I_F
Power dissipation
P_D
DTa1 - DTa2 - DTb1 - DTb2 AP DIODE
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
T_C = 25 °C
T_C = 80 °C
T_SINK = 80 °C
T_C = 25 °C
T_C = 80 °C
Single pulse forward current
I_FSM
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
T_C = 25 °C
Diode continuous forward current
I_F
T_C = 80 °C
T_SINK = 80 °C
Power dissipation
P_D
T_C = 25 °C
T_C = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) _{VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C}
MAX.
1200
20
40
40
22
15
11
89
50
1200
95
22
14
10
80
45
95
22
14
10
80
45
UNITS
V
A
A
W
V
A
W
A
W
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
DbpA - DbpB BYPASS DIODE
Reverse leakage current
I_RRM
V_RRM = 1200 V
V_RRM = 1200 V, T_J = 150 °C
Forward voltage drop
Forward slope resistance
Conduction threshold voltage
Ta1 - Ta2 -Tb1 - Tb2 PFC IGBT
V_FM
I_F = 20 A
I_F = 20 A, T_J = 150 °C
rt
V_T
T_J = 150 °C
Collector to emitter breakdown voltage
BV_CES
V_GE = 0 V, I_C = 250 μA
Collector to emitter voltage
Gate threshold voltage
V_CE(ON)
V_GE(th)
V_GE = 15 V, I_C = 15 A
V_GE = 15 V, I_C = 15 A, T_J = 125 °C
V_CE = V_GE, I_C = 400 μA
Temperature coefficient of threshold
voltage
V_GE(th)/T_J V_CE = V_GE, I_C = 1.0 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
g_fe
V_CE = 20 V, I_C = 15 A
V_GE
V_CE = 20 V, I_C = 15 A
Zero gate voltage collector current
Gate to emitter leakage current
I_CES
V_GE = 0 V, V_CE = 1200 V
V_GE = 0 V, V_CE = 1200 V, T_J = 125 °C
I_GES
V_GE = ± 20 V, V_CE = 0 V
MIN. TYP. MAX. UNITS
-
-
0.14
mA
-
-
3.0
-
1.04 1.23
V
-
0.95
-
-
-
6.6
m
-
-
0.73
V
1200
-
-
4.5
-
-
-
-
-
-
-
2.61
3.05
5.8
-14
8
10
0.0003
0.24
-
-
3.03
-
8.1
-
-
-
0.075
-
± 200
V
mV/°C
S
V
mA
nA
Revision: 16-Jun-16
2
Document Number: 94858
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