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VS-ETL015Y120H Datasheet, PDF (4/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A
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VS-ETL015Y120H
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
DTa1 - DTa2 - DTb1 - DTb2 AP DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
VR = 400 V
Irr
IF = 20 A
Qrr
dl/dt = 500 A/μs
Diode reverse recovery time
trr
VR = 400 V
Diode peak reverse current
Irr
IF = 20 A
Diode recovery charge
Qrr
dl/dt = 500 A/μs, TJ = 125 °C
Note
(1) Energy losses include “tail” and diode reverse recovery.

MIN. TYP. MAX. UNITS
-
127
-
ns
-
16
-
A
-
1020
-
nC
-
153
-
ns
-
19
-
A
-
1464
-
nC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Resistance
B-value
Maximum operating temperature
R25
R100
B25/50
TC = 25 °C
TC = 100 °C
R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))]
Dissipation constant
Thermal time constant
VALUE
5000
493 ± 5 %
3375 ± 5 %
220
2
8
UNITS

K
°C
mW/°C
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
DbpA - DbpB Bypass diode - Junction to case thermal resistance (per diode)
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch)
Da1 - Da2 - Db1 - Db2 Clamping diode - Junction to case thermal resistance (per diode)
RthJC
DTa1 - DTa2 - DTb1 - DTb2 AP diode - Junction to case thermal resistance (per diode)
DbpA - DbpB Bypass diode - Case to sink thermal resistance (per diode)
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case to sink thermal resistance (per switch)
Da1 - Da2 - Db1 - Db2 Clamping diode - Case to sink thermal resistance (per diode)
DTa1 - DTa2 - DTb1 - DTb2 AP diode - Case to sink thermal resistance (per diode)
RthCS (1)
Case to sink thermal resistance per module
Mounting torque (M4)
Weight
Note
(1) Mounting surface flat, smooth, and greased
MIN.
-
-
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
-
0.63
0.96
1.1
1.1
0.1
-
45
MAX.
0.75
1.4
1.56
1.56
-
-
-
-
-
3
-
UNITS
°C/W
Nm
g
Revision: 16-Jun-16
4
Document Number: 94858
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