VS-ETL015Y120H Datasheet, PDF (6/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A

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6.5
T_J = 125 °C
6
5.5
5
4.5
T_J = 25 °C
4
3.5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
I_C (A)
Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. I_C
(with D5 - D6 Clamping Diode)
T_J = 125 °C, V_CC = 300 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
10
1
T_J = 150 °C
0.1
0.01
T_J = 125 °C
0.001
0.0001
T_J = 25 °C
0.00001
100 200 300 400 500 600 700 800 900 1000 1100 1200
V_CES (V)
Fig. 8 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Zero Gate Voltage Collector Current
2
1.8
1.6
1.4
1.2
E_on
1
0.8
E_off
0.6
0.4
0.2
0
0
5
10 15 20 25 30
I_C (A)
Fig. 9 - Typical PFC IGBT Energy Loss vs. I_C
(with Freewheeling Clamping Diode)
T_J = 125 °C, V_CC = 600 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
VS-ETL015Y120H
Vishay Semiconductors
1000
t_f
t_doff
100
10
t_don
t_r
1
0
5
10
15
20 25 30
I_C (A)
Fig. 10 - Typical PFC IGBT Switching Time vs. I_C
(with Freewheeling Clamping Diode)
T_J = 125 °C, V_CC = 600 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
2.4
2.2
2
1.8
1.6
E_on
1.4
1.2
1
0.8
E_off
0.6
0 5 10 15 20 25 30 35 40 45 50
R_g (Ω)
Fig. 11 - Typical PFC IGBT Energy Loss vs. R_g
(with Freewheeling Clamping Diode)
T_J = 125 °C, V_CC = 600 V, I_C = 15 A, V_GE = 15 V, L = 500 μH
1000
t_f
t_doff
100
t_r
t_don
10
0 5 10 15 20 25 30 35 40 45 50
R_g (Ω)
Fig. 12 - Typical PFC IGBT Switching Time vs. R_g
(with Freewheeling Clamping Diode)
T_J = 125 °C, V_CC = 600 V, I_C = 15 A, V_GE = 15 V, L = 500 μH
Revision: 16-Jun-16
6
Document Number: 94858
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