VS-ETL015Y120H Datasheet, PDF (3/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A

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ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
Da1 - Da2 - Db1 - Db2 CLAMPING DIODE
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode blocking voltage
V_BR
Forward voltage drop
V_FM
Reverse leakage current
I_RM
DTa1 - DTa2 - DTb1 - DTb2 AP DIODE
I_R = 100 μA
I_F = 10 A
I_F = 10 A, T_J = 125 °C
V_R = 1200 V
V_R = 1200 V, T_J = 125 °C
Forward voltage drop
V_FM
I_F = 20 A
I_F = 20 A T_J = 125 °C
VS-ETL015Y120H
Vishay Semiconductors
MIN.
1200
-
-
-
-
TYP.
-
2.09
2.16
0.0004
0.25
MAX.
-
2.77
-
0.075
-
UNITS
V
mA
-
2.59 3.25
V
-
2.86
-
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT (WITH FREEWHEELING CLAMPING DIODE)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Q_g
Q_ge
Q_gc
E_ON
E_OFF
E_TOT
t_d(on)
t_r
t_d(off)
t_f
E_ON
E_OFF
E_TOT
t_d(on)
t_r
t_d(off)
t_f
C_ies
C_oes
C_res
RBSOA
Short circuit safe operating area
SCSOA
Da1 - Da2 - Db1 - Db2 CLAMPING DIODE
I_C = 9 A
V_CC = 600 V
V_GE = 15 V
I_C = 15 A
V_CC = 600 V
V_GE = 15 V
R_g = 4.7 
L = 500 μH ⁽¹⁾
I_C = 15 A
V_CC = 600 V
V_GE = 15 V
R_g = 4.7 
L = 500 μH
T_J = 125 °C ⁽¹⁾
V_GE = 0 V
V_CC = 30 V
f = 1 MHz
T_J = 150 °C, I_C = 40 A, V_CC = 600 V, 
V_P = 1200 V, R_g = 4.7 , V_GE = 15 V to 0 V
R_g = 22 , V_CC = 900 V, V_P = 1200 V
V_GE = 15 V to 0
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
t_rr
V_R = 400 V
I_rr
I_F = 10 A
Q_rr
dl/dt = 500 A/μs
t_rr
V_R = 400 V
I_rr
I_F = 10 A
Q_rr
dl/dt = 500 A/μs, T_J = 125 °C
MIN. TYP. MAX.
-
45
-
-
8.7
-
-
20
-
-
0.95
-
-
0.47
-
-
1.42
-
-
23
-
-
22
-
-
58
-
-
178
-
-
1.18
-
-
0.72
-
-
1.89
-
-
24
-
-
23
-
-
60
-
-
219
-
-
1070
-
63
-
26
Fullsquare
-
-
10
-
103
-
-
14
-
-
711
-
-
126
-
-
17
-
-
1047
-
UNITS
nC
mJ
ns
mJ
ns
pF
μs
ns
A
nC
ns
A
nC
Revision: 16-Jun-16
3
Document Number: 94858
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