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VS-ETL015Y120H Datasheet, PDF (1/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A
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VS-ETL015Y120H
Vishay Semiconductors
EMIPAK-2B PressFit Power Module
Double Interleaved Boost Converter, 15 A
EMIPAK-2B
(package example)
PRODUCT SUMMARY
RECTIFIER BYPASS DIODE
VRRM
VFM typical at IF = 20 A
IF at TC = 80 °C
PFC IGBT
1200 V
1.04 V
62 A
VCES
VCE(ON) typical at IC = 15 A
IC at TC = 80 °C
Speed (max.)
1200 V
2.61 V
15 A
20 kHz
Speed
8 kHz to 30 kHz
Package
EMIPAK-2B
Circuit
Double interleaved boost converter
FEATURES
• Trench IGBT technology
• HEXFRED clamping diode technology
• Rectifier bypass diode
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal resistance
• Integrated thermistor
• 10 μs short circuit capability
• Square RBSOA
• Low internal inductances
• Low switching loss
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETL015Y120H is an integrated solution for a double
interleaved boost converter. The EMIPAK-2B package is
easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
Storage temperature range
RMS isolation voltage
DbpA - DbpB BYPASS DIODE
TJ
TStg
VISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Repetitive peak reverse voltage
VRRM
TC = 25 °C
Continuous output current
IF
TC = 80 °C
TSINK = 80 °C
Surge current (non- repetitive)
IFSM
Rated VRRM applied
Power dissipation
TC = 25 °C
PD
TC = 80 °C
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PATENT(S): www.vishay.com/patents 
This Vishay product is protected by one or more United States and International patents.
MAX.
150
-40 to +150
3500
1200
94
62
39
250
167
93
UNITS
°C
V
V
A
W
Revision: 16-Jun-16
1
Document Number: 94858
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000