VS-ETL015Y120H Datasheet, PDF (5/13 Pages) Vishay Siliconix – EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A

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100
T_J = 150 °C
10
T_J = 25 °C
T_J = 125 °C
1
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
V_FM (V)
Fig. 1 - Typical DbpA -DbpB Bypass Diode
Forward Characteristics
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
I_F - Continuous Forward Current (A)
Fig. 2 - Maximum DbpA -DbpB Bypass Diode
Forward Current vs. Case Temperature
30
25
T_J = 25 °C
20
T_J = 125 °C
15
10
T_J = 150 °C
5
0
0.6 1.2 1.8 2.4 3
3.6 4.2 4.8 5.4
V_CE (V)
Fig. 3 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Output Characteristics, V_GE = 15 V
VS-ETL015Y120H
Vishay Semiconductors
30
25
V_GE = 18 V
20
V_GE = 15 V
V_GE = 12 V
15
V_GE = 9 V
10
5
0
0.6 1.2 1.8 2.4 3
3.6 4.2 4.8 5.4
V_CE (V)
Fig. 4 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Output Characteristics, T_J = 125 °C
160
140
120
DC
100
80
60
40
20
0
0
5
10
15
20
25
I_C - Continuous Collector Current (A)
Fig. 5 - Maximum Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Continuous Collector Current vs. Case Temperature
30
V_CE = 20 V
25
20
15
10
T_J = 125 °C
5
T_J = 25 °C
0
5 6 7 8 9 10 11 12 13 14
V_GE (V)
Fig. 6 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Transfer Characteristics
Revision: 16-Jun-16
5
Document Number: 94858
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