SI7501DN-T1-E3 Datasheet, PDF (7/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.16
T_J = 150 °C
0.12
10
0.08
T_J = 25 °C
0.04
Si7501DN
Vishay Siliconix
I_D = 7.7 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
I_D = 250 µA
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10^{- 3}
10^-2 10 ^-1
1
10
Time (s)
Single Pulse Power
I_DM Limited
100 600
10
P(t) = 0.0001
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_A = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
0.01
0.1
BV_DSS Limited
1
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 72173
S-81544-Rev. D, 07-Jul-08
www.vishay.com
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