SI7501DN-T1-E3 Datasheet, PDF (3/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
V_GS = 10 thru 6 V
5V
20
20
Si7501DN
Vishay Siliconix
T_C = - 55 °C
25 °C
15
10
5
0
0
0.16
4V
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
15
125 °C
10
5
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.12
0.08
0.04
V_GS = 6 V
V_GS = 10 V
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 6.4 A
8
800
C_iss
600
400
200
0
0
C_rss
6
C_oss
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 6.4 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72173
S-81544-Rev. D, 07-Jul-08
www.vishay.com
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