SI7501DN-T1-E3 Datasheet, PDF (5/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si7501DN
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM -T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^{- 3}
10^{- 2}
10 ^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10 ^{- 4}
10 ^{- 3}
10^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 72173
S-81544-Rev. D, 07-Jul-08
www.vishay.com
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