SI7501DN-T1-E3 Datasheet, PDF (6/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 thru 5 V
25
25
20
20
4V
15
15
10
5
0
0
0.10
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
0.08
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 7.7 A
8
6
4
2
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
600
C_iss
400
200
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 7.7 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 72173
S-81544-Rev. D, 07-Jul-08