SI7501DN-T1-E3 Datasheet, PDF (4/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.16
T_J = 150 °C
10
0.12
I_D = 6.4 A
0.08
T_J = 25 °C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.4
I_D = 250 µA
0.2
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
0.0
20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
10 ^-3
10^-2 10 ^-1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
10
P(t) = 0.0001
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_A = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
0.01
DC
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 72173
S-81544-Rev. D, 07-Jul-08