SI7501DN-T1-E3 Datasheet, PDF (2/15 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 25 V
V_DS = 0 V, V_GS = ± 20 V
V_DS = - 30 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 55 °C
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ - 5 V, V_GS = - 10 V
V_DS ≤ 5 V, V_GS = 10 V
V_GS = - 10 V, I_D = - 6.4 A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 7.7 A
V_GS = - 6 V, I_D = - 5.3 A
V_GS = 4.5 V, I_D = 6.5 A
Forward Transconductance^a
g_fs
V_DS = - 15 V, I_D = - 6.4 A
V_DS = 15 V, I_D = 7.7 A
Diode Forward Voltage^a
V_SD
I_S = - 1.7 A, V_GS = 0 V
I_S = 1.7 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
P-Channel
V_DS = - 15 V, V_GS = - 10 V, I_D = - 6.4 A
Q_gs
N-Channel
Q_gd
V_DS = 15 V, V_GS = 10 V, I_D = 7.7 A
Gate Resistance
R_g
Turn-On Delay Time
Rise Time
t_d(on)
t_r
P-Channel
V_DD = - 15 V, R_L = 5 Ω
I_D ≅ - 3 A, V_GEN = - 10 V, R_G = 1 Ω
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
N-Channel
V_DD = 15 V, R_L = 5 Ω
I_D ≅ 3 A, V_GEN = 10 V, R_G = 1 Ω
Source-Drain Reverse Recovery Time
t_rr
I_F = - 1.7 A, dI/dt = 100 A/µs
I_F = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Min.
- 1.0
1.0
- 25
25
Typ. Max. Unit
-3
V
3
± 200
nA
± 100
-1
1
µA
-5
5
A
0.041 0.051
0.028 0.035
Ω
0.055 0.075
0.040 0.050
13
S
15
- 0.80 - 1.2
V
0.80
1.2
12.5
19
9
14
2.5
nC
2
3.6
1.3
9
Ω
3
10
15
10
15
20
30
15
25
25
40
20
30
ns
30
45
10
15
25
50
20
40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72173
S-81544-Rev. D, 07-Jul-08