SI4500BDY Datasheet, PDF (7/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Threshold Voltage
0.4
0.3
0.2
I_D = 250 mA
0.1
Single Pulse Power
80
70
60
50
40
30
0.0
20
−0.1
10
−0.2
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Safe Operating Area
100
I_DM Limited
r_DS(on) Limited
10
P(t) = 0.0001
P(t) = 0.001
1
I_D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
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