SI4500BDY Datasheet, PDF (3/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 3 V
2.5 V
25
25
N−CHANNEL
Transfer Characteristics
20
20
15
2V
10
5
0
0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
1.5 V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 9.1 A
15
10
T_C = 125_C
5
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
1600
Capacitance
1400
C_iss
1200
1000
800
600
C_oss
400
200
0
0
C_rss
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 9.1 A
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
12
Q_g − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
www.vishay.com
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