SI4500BDY Datasheet, PDF (6/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
On-Resistance vs. Drain Current
0.20
Capacitance
800
0.16
0.12
V_GS = 2.5 V
0.08
0.04
0.00
0
4
8
V_GS = 4.5 V
12
16
20
700
C_iss
600
500
400
300
C_oss
200
100
C_rss
0
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 5.3 A
4
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.3 A
1.4
3
1.2
2
1.0
1
0.8
0
012345678
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
I_D = 1 A
0.08
I_D = 5.3 A
0.04
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
www.vishay.com
6
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04