SI4500BDY Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
−20
r_DS(on) (W)
0.020 @ V_GS = 4.5 V
0.030 @ V_GS = 2.5 V
0.060 @ V_GS = −4.5 V
0.100 @ V_GS = −2.5 V
I_D (A)
9.1
7.5
−5.3
−4.1
FEATURES
D TrenchFETr Power MOSFET
SO-8
S_{1 1}
8D
G_{1 2}
7D
G₂
S_{2 3}
6D
G_{2 4}
5D
Top View
G₁
Ordering Information: Si4500BDY
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S₂
D
S₁
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{10 sec. Steady State 10 sec. Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
−20
"12
"12
9.1
6.6
−5.3
−3.8
7.3
5.3
−4.9
−3.1
30
−20
2.1
1.1
−2.1
−1.1
2.5
1.3
2.5
1.3
1.6
0.8
1.6
0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
40
50
75
95
20
22
P- Channel
Typ
Max
41
50
75
95
23
26
Unit
_C/W
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