SI4500BDY Datasheet, PDF (5/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^−4
10^−3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 3.5 V
3V
16
16
P-CHANNEL
Transfer Characteristics
T_C = −55_C
25_C
12
2.5 V
8
2V
4
1.5 V
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
12
125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS − Gate-to-Source Voltage (V)
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