SI4500BDY Datasheet, PDF (4/8 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
0
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
I_D = 9.1 A
0.06
0.05
I_D = 3.3 A
0.04
0.03
0.02
0.01
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I_D = 250 mA
0.2
Single Pulse Power
80
70
60
−0.0
−0.2
−0.4
−0.6
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
P(t) = 0.001
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
100 600
www.vishay.com
4
Document Number: 72281
S-41428—Rev. B, 26-Jul-04