GB100DA60UP Datasheet, PDF (7/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GB100DA60UP
Vishay Semiconductors
1
2
3
V_C
90 %
10 %
90 %
t_d(off)
10 %
5%
I_C
t_d(on)
t_r
t_f
E_on
E_off
E_ts = (E_on + E_off)
Fig. 18b - Switching Loss Waveforms Test Circuit
t = 5 µs
ORDERING INFORMATION TABLE
Device code
G B 100 D A 60 U P
1
2
3
4
5
6
7
8
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5
3 - Current rating (100 = 100 A)
4 - Circuit configuration (D = Single switch with antiparallel diode)
5 - Package indicator (A = SOT-227)
6 - Voltage rating (60 = 600 V)
7 - Speed/type (U = Ultrafast IGBT)
8 - Totally lead (Pb)-free
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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