GB100DA60UP Datasheet, PDF (4/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
200
150
100
50
Tj = 125°C
Tj = 25°C
0
0
0.5
1
1.5
2
2.5
V_FM (V)
Fig. 5 - Typical Diode Forward Characteristics
10
TJ = 125°C
1
0.1
0.01
0.001
TJ = 25°C
0.0001
100 200 300 400 500 600
V_CES (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
4.5
4
TJ = 25°C
3.5
3
TJ = 125°C
2.5
2
0.0002
0.0004
0.0006
0.0008
0.001
I_C (mA)
Fig. 7 - Typical IGBT Threshold Voltage
4
3.5
3
100 A
2.5
75 A
2
27 A
1.5
1
0.5
0
20 40 60 80 100 120 140 160
T_J (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V_GE = 15 V
1.8
1.6
1.4
EOFF
1.2
1
0.8
0.6
EON
0.4
0.2
0
10
30
50
70
90
110
I_C (A)
Fig. 9 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V
1000
tdOFF
tdON
tF
100
tR
10
0
20
40
60
80 100 120
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V
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4
For technical questions within your region, please contact one of the following: Document Number: 93001
[e-mail], [e-mail], [e-mail]
Revision: 22-Jul-10