GB100DA60UP Datasheet, PDF (6/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-005
0.0001
0.001
0.01
0.1
1
Rectangular pulse duration (t1)
Fig. 16 - Maximum Thermal Impedance Z_thJC Characteristics (diode)
50 V
1000 V
1
L
V_C *
D.U.T.
2
* Driver same type as D.U.T.; V_C = 80 % of V_ce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 17a - Clamped Inductive Load Test Circuit
R = ^VCC
ICM
D.U.T.
R_g
+
- _VCC
Fig. 17b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
R_g
L
D.U.T./
driver
+
-
V_CC
Fig. 18a - Switching Loss Test Circuit
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6
For technical questions within your region, please contact one of the following: Document Number: 93001
[e-mail], [e-mail], [e-mail]
Revision: 22-Jul-10