GB100DA60UP Datasheet, PDF (5/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GB100DA60UP
Vishay Semiconductors
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
EOFF
EON
10
20
30
40
50
R_G (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, I_C = 100 A, L = 500 μH,
V_CC = 360 V, V_GE = 15 V
1000
tdON
tdOFF
tF
100
tR
10
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
I_C = 100 A, V_GE = 15 V
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
210
190
170
150
130
110
90
70
50
100
TJ = 125°C
TJ = 25°C
1000
dI_F/dt (A/μs)
Fig. 13 - Typical t_rr diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
40
35
30
25
20
15
10
5
0
100
TJ = 125°C
TJ = 25°C
1000
dI_F/dt (A/μs)
Fig. 14 - Typical I_rr diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
0.0001
1E-005
0.0001
0.001
0.01
0.1
1
Rectangular pulse duration (t1)
Fig. 15 - Maximum Thermal Impedance Z_thJC Characteristics (IGBT)
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
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www.vishay.com
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