GB100DA60UP Datasheet, PDF (3/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GB100DA60UP
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
range
T_J, T_Stg
Junction to case
IGBT
Diode
R_thJC
Case to sink per module
Mounting torque, 6-32 or M3 screw
R_thCS
Weight
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.05
-
30
MAX.
150
0.28
0.4
-
1.3
-
UNITS
°C
°C/W
Nm
g
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Continuous collector current, I_C (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
0
1
10
100
1000
V_CE (V)
Fig. 2 - IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V
200
Tj = 25°C
150
100
Tj = 125°C
50
0
0
1
2
3
4
5
V_CE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180
Continuous forward current, I_F (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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