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GB100DA60UP Datasheet, PDF (2/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
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GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 250 μA
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
Temperature coefficient of
threshold voltage
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 150 °C
Forward voltage drop
IC = 100 A, VGE = 0 V
VFM
IC = 100 A, VGE = 0 V, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
3
-
-
-
-
-
-
TYP.
-
2.4
3
3.9
- 10
7
4
1.6
1.7
-
MAX.
-
2.8
3.4
5
-
100
10
2.1
2
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Qg
Qge
IC = 100 A, VCC = 480 V, VGE = 15 V
Qgc
Eon
IC = 100 A, VCC = 360 V,
Eoff
VGE = 15 V, Rg = 5 
Etot
L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
td(off)
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
TJ = 150 °C, IC = 300 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
0.36
1.42
1.78
0.52
1.6
2.12
264
54
257
80
MAX.
690
250
130
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
95
120
-
10
13
-
480
780
-
144
185
-
16
19
-
1136
1758
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
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For technical questions within your region, please contact one of the following: Document Number: 93001
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
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