GB100DA60UP Datasheet, PDF (1/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
SOT-227
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 100 A, 25 °C
I_F DC
600 V
100 A at 61 °C
2.4 V
100 A at 85 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
V_CES
I_C
I_CM
I_LM
I_F
I_FM
V_GE
P_D
P_D
V_ISOL
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
MAX.
600
125
85
300
300
160
105
200
± 20
447
250
313
175
2500
UNITS
V
A
V
W
V
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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