SI8429DB-T1-E1 Datasheet, PDF (6/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

Si8429DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
10
8
6
4
2
0
25
50
75
100
125
150
T_F - Foot Temperature (°C)
Current Derating*
2
1
Duty Cycle = 0.5
* The power dissipation P_D is based on T_J(max.) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used.
It is used to determine the current rating, when this rating falls below
the package limit.
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 74399
6
S13-1847-Rev.D, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000