SI8429DB-T1-E1 Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

Si8429DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
T_C = 25 °C
- 2.5
A
- 25
Body Diode Voltage
V_SD
I_S = - 1 A, V_GS = 0 V
- 0.7
- 1.1
V
Body Diode Reverse Recovery Time
t_rr
150
250
ns
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_rr
t_a
I_F = - 1 A, dI/dt = 100 A/µs, T_J = 25 °C
t_b
150
230
nC
57
ns
93
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74399
For technical questions, contact: [e-mail]
www.vishay.com
S13-1847-Rev.D, 19-Aug-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000