SI8429DB-T1-E1 Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

Si8429DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
25
V_GS = 5 thru 2 V
20
20
15
1.5 V
10
5
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
0.06
V_GS = 1.2 V
V_GS = 1.5 V
V_GS = 1.8 V
0.05
0.04
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.02
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
V_DS = 4 V
4
I_D = 1 A
15
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2500
2000
C_iss
1500
1000
500
C_rss
C_oss
0
012345678
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.3
V_GS = 4.5 V, 2.5 V, 1.8 V, 1.5 V
I_D = 1 A
1.2
3
1.1
2
1.0
1
0.9
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
For technical questions, contact: [e-mail]
Document Number: 74399
4
S13-1847-Rev.D, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000