SI8429DB-T1-E1 Datasheet, PDF (5/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

Si8429DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
0.08
I_D = 1 A
0.07
10
0.06
0.05
T_A = 25 °C
0.04
T_A = 125 °C
T_J = 150 °C
T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.03
0.02
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
80
0.7
I_D = 250 µA
60
0.6
0.5
40
0.4
20
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001 0.01
0.1
1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
I_DM Limited
10
P(t) = 0.0001
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 10
P(t) = 1
DC
BV_DSS Limited
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74399
For technical questions, contact: [e-mail]
www.vishay.com
S13-1847-Rev.D, 19-Aug-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000