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SI8429DB-T1-E1 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET
P-Channel 1.2 V (G-S) MOSFET
Si8429DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.035 at VGS = - 4.5 V
0.042 at VGS = - 2.5 V
-8
0.052 at VGS = - 1.8 V
0.069 at VGS = - 1.5 V
0.098 at VGS = - 1.2 V
ID (A)a
- 11.7
- 10.7
- 9.6
- 8.3
- 1.02
Qg (Typ.)
21 nC
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8429
xxx
S
4
G
1
Device Marking: 8429
xxx = Date/Lot Traceability Code
Ordering Information: Si8429DB-T1-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Industry First 1.2 V Rated MOSFET
• Ultra Small MICRO FOOT® Chipscale
Packaging Reduces Footprint Area,
Profile (0.62 mm) and On-Resistance Per
Footprint Area
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Low Threshold Load Switch for
Portable Devices
S
- Low Power Consumption
- Increased Battery Life
• Ultra Low Voltage Load Switch G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-8
V
VGS
±5
TC = 25 °C
- 11.7
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 9.4
- 7.8b, c
TA = 70 °C
- 6.3b, c
A
Pulsed Drain Current
IDM
- 25
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 5.7
- 2.5b, c
TC = 25 °C
6.25
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
4
2.77b, c
W
TA = 70 °C
1.77b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Package Reflow Conditionsd
IR/Convection
260
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 74399
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1847-Rev.D, 19-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000