SI8429DB-T1-E1 Datasheet, PDF (2/11 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

Si8429DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Foot (Drain)
R_thJA
35
Steady State
R_thJF
16
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
Max.
45
20
Unit
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = - 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
V_DS/T_J
V_GS(th)/T_J
I_D = - 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
V_DS = V_GS, I_D = - 5 mA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 5 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 8 V, V_GS = 0 V
V_DS = - 8 V, V_GS = 0 V, T_J = 70 °C
On-State Drain Current^a
I_D(on)
V_DS 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 1 A
V_GS = - 2.5 V, I_D = - 1 A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = - 1.8 V, I_D = - 1 A
V_GS = - 1.5 V, I_D = - 1 A
V_GS = - 1.2 V, I_D = - 1 A
Forward Transconductance^a
g_fs
V_DS = - 4 V, I_D = - 1 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = - 4 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = - 4 V, V_GS = - 5 V, I_D = - 1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = - 4 V, V_GS = - 4.5 V, I_D = 1 A
V_GS = - 0.1 V, f = 1 MHz
V_DD = - 4 V, R_L = 4 
I_D  - 1 A, V_GEN = - 4.5 V, R_g = 6 
Min.
-8
- 0.35
Typ.
- 7.5
- 2.2
- 0.6
-5
0.029
0.035
0.043
0.051
0.065
0.7
1640
590
380
24
21
1.8
3.7
22
12
25
260
155
Max.
Unit
- 0.8
± 100
-1
- 10
0.035
0.042
0.052
0.069
0.098
1.2
V
mV/°C
V
nA
µA
A

S
pF
26
32
nC

20
40
ns
390
240
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Document Number: 74399
2
S13-1847-Rev.D, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000