V23990-P629-L81-PM Datasheet, PDF (9/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I D)
1
MOSFET
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
t_{d(off )}
0,1
0,1
MOSFET
t_{d(off )}
0,01
0,001
0
5
10
15
20
With an induc tive load at
Tj=
125
°C
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
R goff =
4
Ω
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I D)
0,012
t_d(on)
t_r
t_f
25
30
ID (A)
FWD
0,009
t_rr
t_rr
0,006
t_d(on)
0,01
t_r
t_f
0,001
0
2
4
6
With an inductive load at
Tj=
125
°C
V DS =
700
V
V GS = +16/0 V
ID =
16
A
8
10
12
14
16
18
rg (Ω)
Figure 8.
Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or
t rr = f(R gon)
0,012
0,009
FWD
t_rr
t_rr
0,006
0,003
0,003
0
0
5
10
At
V DS= 700
V
V GS = +16/0 V
R gon =
4
Ω
15
T j:
20
25 °C
125 °C
150 °C
25
30
ID (A)
0
0
2
4
6
At
V DS = 700
V
V GS = +16/0 V
ID =
16
A
8
10
12
14
16
18
Rg on (Ω)
25 °C
Tj:
125 °C
150 °C
Copyright Vincotech
9
19 Nov. 2015 / Revision 1