V23990-P629-L81-PM Datasheet, PDF (10/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switching Characteristics
Figure 9.
Typical recovered charge as a f unction of collector current
Qr = f(I D)
0,12
FWD
Figure 10.
Typical recoved charge as a f unct ion of MOSFET t urn on gate resistor
Q r = f(R gon)
0,15
FWD
0,09
0,06
0,03
Q_r
0,12
Q_r
0,09
Q_r
0,06
Q_r
0,03
At
0
0
5
A
V DS =
700
V GS = +16/0
R gon =
4
10
V
V
Ω
15
T j:
20
25
30
ID (A)
25 °C
125 °C
150 °C
0
0
2
4
6
At
V DS =
700
V
V GS = +16/0 V
ID =
16
A
8
10
12
14
16
18
Rgon (Ω)
25 °C
T j:
125 °C
150 °C
Figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I D)
12
9
6
FWD
I_RM
I_RM
3
0
0
5
At
V DS = 700
V GS = +16/0
R gon =
4
10
V
V
Ω
15
T j:
20
25
30
ID (A)
25 °C
125 °C
150 °C
Figure 12.
Typical peak reverse recovery current as a f unct ion of MOSFET t urn on gate resistor
I RM = f(R gon)
16
FWD
12
8
I_RM
4
I_RM
0
0
2
4
6
At
V DS =
700
V
V GS = +16/0 V
ID =
16
A
8
10
12
14
16
18
R go n (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
10
19 Nov. 2015 / Revision 1