V23990-P629-L81-PM Datasheet, PDF (12/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 4Ω
R goff
= 4Ω
Figure 1.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
125
%
t_doff
V_DS
100
V_{GS 90%}
V_{DS 90%}
75
V_GS
I_D
50
t_Eoff
25
I_{D 1%}
0
-25
-0,1
-0,05
0
0,05
0,1
V GS (0%) =
V GS (100%) =
V DS (100%) =
I D (100%) =
t doff =
t Eoff =
Figure 3.
0
16
700
16
0,129
0,155
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
I_D
100
75
V
V
V
A
µs
µs
fitted
I_{D 90%}
I_{D 60%}
50
I_{D 40%}
25
I_{D 10%}
0
-25
0,03
0,05
0,07
0,09
t_f
0,11
V C (100%) =
I D (100%) =
tf =
700
V
16
A
0,005
µs
0,15
0,2
t (µs)
MOSFET
V_DS
0,13
0,15
t ( µs)
Figure 2.
MOSFET
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
175
%
I_D
150
125
V_DS
100
75
V_GS
t_don
50
25
V_{GS 10%}
0
I_{D 10%}
t_Eon
-25
2,98
3
3,02
V GS (0%) =
V GS (100%) =
V DS (100%) =
I D (100%) =
t don =
t E on =
Figure 4.
0
16
700
16
0,014
0,067
Turn-on Swit ching Wavef orms & def init ion of tr
175
%
I_D
150
3,04
V
V
V
A
µs
µs
V_{DS 3%}
3,06
3,08
3,1
t (µs)
MOSFET
125
V_CE
100
75
50
I_{C 90%}
t_r
25
I_{C 10%}
0
-25
3,005
3,015
V C (100%) =
I D (100%) =
tr =
3,025
3,035
3,045
700
V
16
A
0,007
µs
3,055
3,065
3,075
t (µs)
Copyright Vincotech
12
19 Nov. 2015 / Revision 1