V23990-P629-L81-PM Datasheet, PDF (5/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switch Characteristics
Typical output characteristics
I D = f(V DS)
80
MOSFET
70
60
50
40
30
20
10
0
0
tp =
V GS=
2
4
250
18
6
8
µs
V
10
12
14
16
25 °C
T j:
125 °C
150 °C
18
20
VDS (V)
Typical output characteristics
I D= f(V DS)
80
60
40
20
0
-20
-40
-10
-5
0
5
10
tp =
Tj =
V GS from
250
µs
150
°C
0 V to 20 V in steps of 2 V
MOSFET
15
20
VDS (V)
Typical transfer characteristics
I D = f(V GS)
35
MOSFET
30
25
20
15
10
5
0
0
tp =
V DS =
2
100
10
4
6
µs
V
8
10
12
25 °C
T j:
125 °C
150 °C
14
16
VGS (V)
Transient thermal impedance as a function of pulse width MOSFET
Z th(j-s)= f(t p)
10¹
10⁰
10^-1
10^-2
10^-4
10^-3
10^-2
10^-1
10⁰
D=
R th(j-s) =
tp / T
1,48
K/W
R (K/W)
1,30E- 01
4,11E- 01
7,09E- 01
1,27E- 01
1,00E- 01
T au(s)
1,00E+00
1,66E- 01
6,11E- 02
5,50E- 03
8,02E- 04
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10¹
10²
Copyright Vincotech
5
19 Nov. 2015 / Revision 1