V23990-P629-L81-PM Datasheet, PDF (8/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I D)
1,2
MOSFET
Figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(rg)
1,2
E_on
0,9
0,9
E_on
0,6
0,6
E_off
0,3
0,3
E_off
MOSFET
E_{o n}
E_on
E_off
E_{o ff}
0
0
5
10
With an induc tive load at
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
R goff =
4
Ω
15
T j:
20
25
30
IC (A)
25 °C
125 °C
150 °C
Figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I D)
0,03
FWD
0,025
0,02
0,015
E_rec
E_rec
0,01
0,005
-1,73E-17
0
5
10
With an induc tive load at
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
15
T j:
20
25 °C
125 °C
150 °C
25
30
I D (A)
0
0
2
4
6
With an inductive load at
V DS =
700
V
V GS = +16/0 V
ID =
16
A
8
10
12
14
16_{Rg ( Ω)} 18
25 °C
T j:
125 °C
150 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
0,05
FWD
0,04
0,03
0,02
0,01
0
0
2
4
6
With an inductive load at
V DS =
700
V
V GS = +16/0 V
ID =
16
A
E_rec
E_rec
8
10
12
14
16
18
rg (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
8
19 Nov. 2015 / Revision 1