V23990-P629-L81-PM Datasheet, PDF (3/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Characteristic Values
Parameter
Symbol
Boost Switch
Static
Drain-sourc e on-state resistanc e
r DS(on)
Gate-source threshold voltage
Gate to Sourc e Leakage Current
V _GS(th) V GS = V DS
I GSS
Zero Gate Voltage Drain Current
I _DSS
Internal gate resistance
rg
Gate c harge
Q_g
Gate to source charge
Q GS
Gate to drain charge
Q GD
Short-circ uit input capacitance
C iss
Short-circ uit output capacitance
C oss f=1MHz
Reverse transfer capac itance
C rss
* VGS=-6V for 100msec is applied. Measuring time: 2.5msec .
** VGS=+22V for 100msec is applied. Measuring time: 2.5msec.
Conditions
Value
VGE [V] VCE [V] IC [A] Tj[°C] Min Typ Max
Unit
18
-6/+22 0
0
1200
25
10
125
150
25
0,0044
125
25
125
25
125
18
400
10
25
0
800
25
79
111
108
mΩ
121
1,7*
3
4**
V
±100
nA
10
µA
9
Ω
110
24
nC
38
2070
80
pF
20
Thermal
Thermal resistance junction to sink
MOSFET Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
ph a s e -cha ng e
R _th(j-s) material λ=3,4
W /mK
t d(on)
t_r
R goff = 4 Ω
R gon = 4 Ω
t d(off)
t_f
+16/0 700
16
E on
Q rFWD = 0,1 µC
Q _rFWD = 0,1 µC
E _off
25
125
25
125
25
125
25
125
25
125
25
125
1,41
15
14
8
7
113
129
5
5
0,399
0,303
0,174
0,186
K/W
ns
mWs
Copyright Vincotech
3
19 Nov. 2015 / Revision 1