V23990-P629-L81-PM Datasheet, PDF (11/17 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L81-PM
datasheet
Boost Switching Characteristics
Figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F/dt ,di rr/dt = f(I c)
5000
4000
di_F / dt
di_{r r}/dt
FWD
3000
2000
1000
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of MOSFET t urn on gat e resist or
di F/dt ,di rr/dt = f(R g)
6000
5000
di _F / dt
di_{r r}/dt
4000
3000
2000
1000
0
0
5
At
V DS = 700
V GS = +16/0
R gon =
4
10
V
V
Ω
15
T j:
20
25 °C
125 °C
150 °C
25
30
IC (A)
0
0
2
4
6
At
V DS = 700
V
V GS = +16/0 V
I D=
16
A
8
10
12
14
16
18
R_{g on} (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
11
19 Nov. 2015 / Revision 1