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| 10-F112M3A025SH-M746F09 Datasheet, PDF (9/26 Pages) Vincotech – 3 phase mixed voltage component topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3000
2500
dIrec/dt T
dIo/dt T
2000
1500
1000
500
0
0
5
10
15
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
16
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
5000
dIrec/dt T
dI0/dt T
4000
FWD
3000
2000
1000
20
25
I C (A) 30
0
0
16
32
48
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
15
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
64
R gon ( â¦) 80
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,64
K/W
IGBT thermal model values
R (C/W)
0,20
0,61
0,53
0,21
0,09
Tau (s)
7,2E-01
1,3E-01
4,6E-02
9,8E-03
1,3E-03
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1012
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,48
K/W
FWD thermal model values
R (C/W)
0,08
0,16
1,07
0,61
0,31
0,25
Tau (s)
4,1E+00
5,7E-01
7,9E-02
2,0E-02
4,7E-03
9,2E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1012
copyright Vincotech
9
2014.12.18. / Revision: 3
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