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| 10-F112M3A025SH-M746F09 Datasheet, PDF (16/26 Pages) Vincotech – 3 phase mixed voltage component topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3500
3000
dIrec/dt T
di0/dt T
2500
2000
1500
1000
500
0
0
5
10
15
At
Tj =
VCE =
VGE =
Rgon =
25/126 °C
350
V
±15
V
16
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
8000
dIrec/dt T
dI0/dt T
FWD
6000
4000
2000
20
25
I C (A) 30
0
0
16
32
48
At
Tj =
VR =
IF =
VGE =
25/126 °C
350
V
15
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
64
R gon ( â¦) 80
FWD
100
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s)
1012
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 1012
At
D=
RthJH =
tp / T
3,09
K/W
At
D=
RthJH =
tp / T
3,65
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,09
0,37
1,74
0,36
0,25
0,24
Tau (s)
1,8E+00
2,7E-01
6,9E-02
1,4E-02
3,4E-03
4,1E-04
R (C/W)
0,15
0,58
1,42
0,77
0,72
Tau (s)
1,2E+00
1,7E-01
4,8E-02
9,0E-03
1,8E-03
copyright Vincotech
16
2014.12.18. / Revision: 3
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