10-F112M3A025SH-M746F09 Datasheet, PDF (3/26 Pages) Vincotech – 3 phase mixed voltage component topology

Parameter
Half Bridge IGBT (T1,T4,T5,T8,T9,T12)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Neutral P. FWD (D2,D3,D6,D7,D10,D11)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Value
Min
Typ
Max
Unit
V_GE(th) VCE=VGE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_d(off)
Rgoff=16 Ω
±15
t_f
Rgon=16 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
±15
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
350
25
960
0,00085
Tj=25°C
Tj=125°C
5,2
25
Tj=25°C
1,7
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5,8
6,4
V
2,11
2,4
2,42
V
0,0024
mA
120
nA
none
Ω
Tj=25°C
73
Tj=125°C
74
Tj=25°C
15
Tj=125°C
18
Tj=25°C
166
ns
15
Tj=125°C
Tj=25°C
220
21
Tj=125°C
116
Tj=25°C
0,17
Tj=125°C
Tj=25°C
0,30
0,37
mWs
Tj=125°C
0,63
1430
Tj=25°C
99
pF
85
25
Tj=25°C
155
nC
1,64
K/W
V_F
15
I_r
600
I_RRM
t_rr
Q_rr Rgon=16 Ω
±15
350
15
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,47
2,6
1,73
V
10
µA
16
22
23
33
0,19
0,44
1860
1998
0,03
0,05
A
ns
µC
A/µs
mWs
2,48
K/W
copyright Vincotech
3
2014.12.18. / Revision: 3