10-F112M3A025SH-M746F09 Datasheet, PDF (15/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,5
2,0
1,5
1,0
0,5
0,0
0
At
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
350
V
±15
V
16
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
40
30
20
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
FWD
2
Q_{rr High T}
1,5
Q_{rr High T}
Q_{rr Low T}
1
0,5
Q_{rr Low T}
20
25 _{I C (A)} 30
0
0
16
32
48
At
T_j =
V_R =
I_F =
V_GE =
25/126 °C
350
V
15
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
60
40
64
R gon ( Ω) ⁸⁰
FWD
10
20
I_{RRM High T}
0
0
0
5
10
15
20
25 _{I C (A)} 30
0
I_{RRM Low T}
16
32
48
64
R gon ( Ω) ⁸⁰
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
350
V
±15
V
16
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/126 °C
350
V
15
A
±15
V
copyright Vincotech
15
2014.12.18. / Revision: 3