10-F112M3A025SH-M746F09 Datasheet, PDF (7/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
0,10
0,01
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
t_doff
t_f
0,10
t_don
t_r
IGBT
t_doff
t_don
t_f
t_r
0,01
0,00
0,00
0
5
10
15
20
25
I C (A) ³⁰
0
16
32
48
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
16
Ω
R_goff =
16
Ω
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
15
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,04
0,03
0,02
0,01
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,1
0,08
t_{rr Low T}
0,06
0,04
0,02
0,00
0
5
10
15
20
25 _{I C (A)} 30
0
0
16
32
48
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
16
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
15
A
±15
V
64
R G ( Ω) ⁸⁰
FWD
t_{rr High T}
t_{rr Low T}
64
R gon ( Ω) 80
copyright Vincotech
7
2014.12.18. / Revision: 3