10-F112M3A025SH-M746F09 Datasheet, PDF (13/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
1
0,8
0,6
0,4
0,2
0
0
5
10
15
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/126 °C
350
V
±15
V
16
Ω
16
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,6
0,5
0,4
0,3
0,2
0,1
0
0
5
10
15
With an inductive load at
T_j =
25/126 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
16
Ω
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
IGBT
E_{off High T}
E_{on High T}
E_{on Low T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1
0,8
0,6
0,4
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0,2
0
20
25 _{I C (A)} 30
0
16
32
48
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/126 °C
350
V
±15
V
15
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,6
0,5
0,4
0,3
E_{rec Low T}
0,2
0,1
20
25
30
I C (A)
0
0
16
32
48
With an inductive load at
T_j =
25/126 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
15
A
64 _{R G( Ω )} 80
FWD
E_{rec High T}
E_{rec Low T}
64 _{R G ( Ω )} 80
copyright Vincotech
13
2014.12.18. / Revision: 3