10-F112M3A025SH-M746F09 Datasheet, PDF (8/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
16
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
30
25
20
15
10
5
0
0
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
16
Ω
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
FWD
0,6
Q_{rr High T}
0,5
0,4
0,3
Q_{rr Low T}
0,2
Q_{rr High T}
0,1
Q_{rr Low T}
20
25
30
I C (A)
0
0
16
32
48
64 _{R gon ( Ω)} 80
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
15
A
±15
V
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
50
FWD
40
I_{RRM High T}
30
I_{RRM Low T}
20
10
I_{RRM High T}
I_{RRM Low T}
0
20
25 _IC(A) 30
0
16
32
48
64
R gon ( Ω) 80
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
15
A
±15
V
copyright Vincotech
8
2014.12.18. / Revision: 3