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| V23990-K249-A-PM Datasheet, PDF (8/17 Pages) Vincotech – IGBT3 technology for low saturation losses | |||
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V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
4500
D1,D2,D3,D4,D5,D6,D7 FWD
3600
2700
1800
dIrec/dtHigh T
di0/dtHigh T
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
4500
3600
D1,D2,D3,D4,D5,D6,D7 FWD
dIrec/dt
dI0/dt
2700
1800
900
0
0
30
60
At
Tj =
125
°C
VCE =
600
V
VGE =
±15
V
Rgon =
18
â¦
900
dI0/dt
dIrec/dt
90
I C (A) 120
0
0
10
20
30
40 R gon ( ⦠) 50
At
Tj =
125
°C
VR =
600
V
IF =
50
A
VGE =
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,55
K/W
IGBT thermal model values
Thermal grease
R (C/W) Tau (s)
0,08
1,8E+00
0,22
2,2E-01
0,16
6,3E-02
0,06
8,4E-03
0,03
6,2E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100 t p (s)
10110
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
1
K/W
FWD thermal model values
Thermal grease
R (C/W) Tau (s)
0,04
3,5E+01
0,10
1,8E+00
0,40
2,3E-01
0,40
6,3E-02
0,11
8,3E-03
0,07
8,5E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 10110
Copyright by Vincotech
8
Revision: 2.1
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