V23990-K249-A-PM Datasheet, PDF (4/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I_C = f(V_CE)
180
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I_C = f(V_CE)
180
T1,T2,T3,T4,T5,T6,T7 IGBT
150
150
120
120
90
90
60
60
30
30
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
4
V CE (V)
5
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
125
°C
7 V to 17 V in steps of 1 V
4
V CE (V) 5
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
90
75
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
180
150
D1,D2,D3,D4,D5,D6,D7 FWD
T_j = 25°C
60
120
T_j = T_jmax-25°C
45
90
30
60
15
T_j = T_jmax-25°C
30
T_j = 25°C
0
0
2
4
6
8
10 V GE (V) 12
0
0
0,5
1
1,5
2
2,5 V F (V) 3
At
t_p =
250
µs
V_CE =
10
V
At
t_p =
250
µs
Copyright by Vincotech
4
Revision: 2.1