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V23990-K249-A-PM Datasheet, PDF (3/17 Pages) Vincotech – IGBT3 technology for low saturation losses
V23990-K249-A-PM
Parameter
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
R100
Power dissipation constant
A-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VF
Vto
rt
Ir
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
35
35
35
1500
Tj=25°C
0,8
1,02
1,35
Tj=125°C
0,94
V
Tj=25°C
0,88
Tj=125°C
0,75
V
Tj=25°C
Tj=125°C
4
6
mΩ
Tj=25°C
Tj=125°C
0,1
2
mA
0,90
K/W
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off) Rgoff=18 Ω
±15
tf
Rgon=18 Ω
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
±15
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
600
25
960
0,002
50
50
50
Tj=25°C
5
Tj=125°C
5,8
6,5
V
Tj=25°C
1,35
1,66
2,15
Tj=125°C
1,87
V
Tj=25°C
Tj=125°C
0,005
mA
Tj=25°C
Tj=125°C
300
nA
4
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
66
23
ns
492
205
5,48
mWs
5,47
3700
Tj=25°C
800
pF
700
Tj=25°C
360
nC
0,55
K/W
VF
IRRM
trr
Qrr Rgon=18 Ω
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
R
∆R/R R100=1670 Ω
P
B(25/50) Tol. %
B(25/100) Tol. %
50
600
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,3
1,57
1,56
95
455
12,5
2833
5,17
1
1,9
V
A
ns
µC
A/µs
mWs
K/W
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
-3
3
1670,313
7,635*10-3
1,731*10-5
E
Ω
%
Ω
mW/K
1/K
1/K²
Copyright by Vincotech
3
Revision: 2.1