V23990-K249-A-PM Datasheet, PDF (7/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
20
Q_rr
16
T_j = T_jmax -25°C
12
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
20
16
T_j = T_jmax -25°C
12
Q_rr
8
8
4
4
0
At ⁰
30
60
At
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
90
I C (A) 120
0
0
10
20
30
40
R g on ( Ω) 50
At
T_j =
125
°C
V_R =
600
V
I_F =
50
A
V_GE =
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
120
D1,D2,D3,D4,D5,D6,D7 FWD
I_RRM
90
T_j = T_jmax -25°C
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
D1,D2,D3,D4,D5,D6,D7 FWD
90
T_j = T_jmax - 25°C
60
60
30
30
0
0
30
60
At
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
0
90
I C (A) 120
0
10
20
30
40 R gon ( Ω ) 50
At
T_j =
125
°C
V_R =
600
V
I_F =
50
A
V_GE =
±15
V
Copyright by Vincotech
7
Revision: 2.1